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YSZ place to make the device smaller SiO2

Engineering researchers in amorphous silicon dioxide is not the growth of silicon thin film buffer layer grown directly on the success of yttrium stabilized zirconia (YSZ) films. YSZ thin film is expected to replace SiO: gate dielectric layer, so that the IC, further reducing the device size. The YSZ film thickness 1.77nm under the 1V bias leakage current density of only 1.5 × 10A/cm, this value is almost the same thickness than, the same capacitor SiO: 5 orders of magnitude smaller. YSZ film is almost negligible lag, the interface state density of less than 3 × 10 ¨ cm five eV \Although SiO: in the discrete devices and integrated circuits has been used as the main gate dielectric, but as the film thickness is reduced from the quantum tunneling current increases exponentially, which caused a small device size is limited. Thickness of less than 2nm in the SiO: films, the leakage current density is as high as several A / cm. Some ideas are not satisfactory substitute, and YSZ contact with the silicon remains in the thermodynamically stable when the 1000K, the dielectric constant of 25 ~ 29.7, the change did not change with the thickness of dynamic modern 7 9 2002 Large. YSZ film is in the Si (100) substrates epitaxial growth. Substrates for the P-type,[link widoczny dla zalogowanych], resistivity 2OQcm, by pulsed laser deposition. Atomic force microscopy showed that the films were atomically smooth. Imm diameter aluminum electrodes generated by evaporation, under the conditions in the 100KHz c - v and I_-v measured. '(Yang Yinghui Excerpt) SiC Schottky diode and the Japan Research Institute of Electric Power Industry Centre, Fuji Electric cooperative research and development company jointly developed a SiC Schottky diode, this diode voltage can be tolerated while the startup resistor 3.4KV is very small. They present a unique chemical vapor deposition (CVD) technology, high quality single crystal growth,[link widoczny dla zalogowanych], the growth rate of technology than the usual high-3 \Generally speaking, if this diode voltage experienced by more than 3KV, then the resistance started to increase, while the newly developed diode resistance is reduced to this kind of start close to the theoretical limit, which makes Schottky diode technology 3KV reached the level of practical low loss. Center Research Institute is responsible for developing the high-speed CVD growth of high-quality SiC single crystal technology, and Fujitsu is focused on the optimization of device structure. Substrate is used for 4H. SiC,[link widoczny dla zalogowanych], the system breakdown voltage 3.4KV, start the resistance 16mQ/cm, is the general resistance of the device start 112 ~ 1 / 3. CVD process uses a newly developed vertical high-frequency heating reactor, high-frequency coil placed outside the furnace, when the high temperature 1550 ℃ and the thermal field distribution in the past with (internal) direct heating of substrate heating system is difficult to achieve Such uniformity. High voltage diode to use thicker epitaxial layer, a newly developed CVD process at low voltages,[link widoczny dla zalogowanych], enabling high-speed growth, the growth rate of l4um / h ~ l6um / h, while precise control of source gas flow rate, the growth smooth, flat surface epitaxial layer, which prevents the electric field as the concentration of the interface node. Computer simulation can optimize the device structure, the main parameters to be optimized is the P-type ion implantation area of the density slope and into the layer thickness, the electric field concentrated in the edge of the Schottky diode. (Deng Zhijie translation) large-capacity ceramic capacitors Matsushita Electronic Components has developed a chip-based high-capacity laminated ceramic capacitor technology, and the development of this technology as an opportunity, followed by development of 4.7F, lOuF other capacitors in order to enrich series of large-capacity ceramic capacitors. Large capacity of the ceramic capacitor technology mainly laminated ceramic capacitor is the main material used in the composition of barium titanate were studied, is a ceramic material, \\So-called \In addition,[link widoczny dla zalogowanych], the chip-type ceramic capacitors are the main component of barium titanate dielectric material mixed in the resin body and make films, then made this film laminated capacitors. Previously, in the dielectric body of the aspects of film-based method using Green's films, but this method particles diffuse, strength, compression rate difficult, so alone, Matsushita Electronic Components Company in favor of the type of the resin film particles with the column selection and method of improving the Green-chip law diffuse, the shortcomings of intensity difference, in order to improve the chip compression ratio, but also for other improvements to improve the porosity. 8

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