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SrTiO3-based high-voltage capacitors for ceramic
Performance parameters. In order to compare the t in Table 1 also gives the BaTiOs performance parameters based business Huan 1SrTiOs porcelain and ceramic-based performance parameters IMTiOa Table1PerformanceparametersofSrT [OaandBa ・ TOabasedceramics electricity consumption off t the media poke Yue-Kai Xin Po porcelain electrical resistance breakdown sample C, pFtan8,[link widoczny dla zalogowanych], R. n plot, kV / mrSrT ∞ 3100 ≤ 1> 10L8 ~ 15BaTDl1001 ~ 1.5> 10n5 ~ S number. Table 1 shows that the two media business ceramic dielectric loss tan8 \3.2e and tan5 relationship with T Figure 1 shows the SrT [O-based ceramic samples of the dielectric constant and dielectric loss tan8 E T variation of temperature. Can be seen from Figure 1,[link widoczny dla zalogowanych], 1e and tan5 around the relationship with T FLg1Dependenceof ? andtaonT out in the 25 ~ +85 C temperature range, e and tan8 value with the increase of T, the low parapet flat,[link widoczny dla zalogowanych], indicating that SrTiOs based dielectric ceramics is a better temperature characteristics. 3.3 ? and tan8 relationship with the f Figure 2 shows the dielectric constant of SrTiO-based ceramic samples E and the dielectric loss with frequency f lan3 variation of the logarithm. Can be seen from Figure 2, e values increase with the logf rhyme slowly decreased, while the tan6 values slowly increased. In lkHz, the measured ? ≈ 1800, while the tan8 ≈ 0.05 = Therefore, SrTLO. Ceramic high-frequency field can be widely used. Figure 2: the difference between the Department of Fig2Dependence0feandtart5onlogf3.4 din logf behavior lkHz exchange bias field electric field measurements, the sample bias electric field applied to observe the dielectric constant e in the electric field under different bias changes. Figure 3 shows the measurement results. It can be seen from Figure 3, in the O ~ 2MV / m DC bias electric field, E the change does not exceed lO. Used for high voltage ceramic density of 3.5 SrT [O based ceramics made from color television sets and other measuring instruments focus on the high circuit bandit circuits high voltage ceramic capacitors, the main functional materials】 997,28 (5) Technical Specifications Table 2 . As can be seen from Table 2, 100pF ceramic capacitor high voltage fully meet the technical specifications of the requirements of the circuit color TV focus. Figure 3e behavior of the bias electric field E. cMv distressed Fig3Behav [ourofeatIX; biasedfield Table 21OOpF technical specifications of high voltage ceramic capacitors Table2TechnLca [indexof100pFceramiccapactorfreedomfromhighvollage foot inch diameter ceramic ≤ 8.5, (tam) capacity of the thickness of ≤ 70 degree mark He allowed partial cover 100 ± 10 (pF) mass loss tan8 boat () ≤ l1kV charge irain kai edge resistance (n) ≥ 101i rated voltage after reading (DC, kV) l2 silicone oil in the insulation test voltage (DC,[link widoczny dla zalogowanych], kV) 18 m temperature characteristics to maintain, ac / e () ± l0 ( a 25 ~ +85 C) 4 Conclusions (1) SrTLOa based ceramics using the traditional ceramic technology to prepare, the dielectric loss tan ~ \The. SrTiO-based ceramics can be used to make high-quality high-voltage capacitors (2) SrTiO ? and can8 based ceramics increased with temperature T to reduce flat, the dielectric temperature characteristics are quite good. s Bu TiO-based ceramics in a 25 ~ +85 C temperature range applied. (3) SrTiO3-based ceramics and tan5 E logf changes with changing slowly at room temperature and under lkHz. E ≈ 1300,[link widoczny dla zalogowanych], tan8 ≈ 0-03. SrTiO-based ceramics can be applied in the high-frequency field. References Xiao Ming Shan Wang Jian, Zhuang was new electronic components and materials, 1988,7 (4): 30 Xiao Ming Shan, Cheng-Ju, Wang Jian functional materials. 1996.27 (5): 441MurakamiAAmCeramSocBull, 1976,55; 787 deposit Chen Hong, Xiao Ming Shan, Liang-school piezoelectric and acousto-optic, 1993,15 f4): 2750
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